▎ 摘　　要

NOVELTY - An infrared photodetector (100) comprises substrate (110); mesa disposed on substrate and comprising layer (120) of amorphous silicon disposed on section of substrate; layer of long wave infrared radiation (LWIR) absorbing material disposed on layer of amorphous silicon; and greater than or equal to 1 passivation layers (140, 150) disposed on at least a portion of sidewall of the mesa, where layer of LWIR absorbing material is operable to absorb infrared light in a range of wavelengths of 8-12 mu m and produce a photocurrent, and layer of amorphous silicon is operable to produce a carrier multiplication to amplify the photocurrent. USE - An infrared photodetector. ADVANTAGE - The uncooled LWIR photodetector is capable of operating at room temperature, having a simple structure and an inexpensive method of its manufacture. The photodetector designs and methods of fabrication can allow production of an LWIR photodetector device which has a very simple structure, is easy and low cost to fabricate, and which can operate under room temperature showing high responsivity, high detectivity, low noise equivalent power, and high frequency response of greater than 20 kHz. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) uncooled long-wave infrared (LWIR) photodetector comprising 1st amorphous semiconductor material layer and 2nd amorphous semiconductor material layer in contact with 1st amorphous semiconductor material layer, where 1st amorphous semiconductor material layer is configured to absorb infrared light and produce a photocurrent, and 2nd amorphous semiconductor material layer is configured to produce a carrier multiplication; and (2) manufacture of infrared photodetector which involves forming multilayer structure by depositing layer of amorphous silicon (a-Si) on at least a section of a substrate and depositing layer of LWIR absorbing material next to the amorphous silicon, or depositing layer of LWIR absorbing material on at least a section of a substrate and depositing a layer of a-Si next to the LWIR absorbing material, depositing greater than or equal to 1 passivation layers on at least a portion of sidewall of the multilayer structure, forming 1st electrode in contact with one of layer of LWIR absorbing material or a-Si layer, and forming 1st contact pad in contact with the 1st electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the uncooled LWIR photodetector device. Infrared photodetector (100) Substrate (110) Layer of amorphous silicon (120) Amorphous germanium layer (130) Passivation layers (140, 150)