• 专利标题:   Three-dimensional graphene quantum dot (GQD) light-emitting device for light amplification, has nanowires on conductive semiconductor base layer and graphene quantum dot coating layer that is mounted on surface and interior of nanowire.
  • 专利号:   US2019312174-A1, KR2019117179-A, KR2170470-B1, US10873004-B2
  • 发明人:   HWANG S W, CHOI S H
  • 专利权人:   UNIV SANGMYUNG CHEONAN COUNCIL IND ACADE, UNIV KYUNGHEE IND COOP, UNIV SANGMYUNG CHEONAN COUNCIL IND ACADE, UNIV KYUNGHEE IND COOP
  • 国际专利分类:   H01L033/00, H01L033/06, H01L033/26, H01L033/44
  • 专利详细信息:   US2019312174-A1 10 Oct 2019 H01L-033/06 201981 Pages: 14 English
  • 申请详细信息:   US2019312174-A1 US375872 05 Apr 2019
  • 优先权号:   KR040377

▎ 摘  要

NOVELTY - The light-emitting device has a first conductive semiconductor base layer. Multiple nanowires are arranged on the first conductive semiconductor base layer and include a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer which are sequentially formed from inside to outside. A graphene quantum dot coating layer is mounted on a surface and an interior of the nanowire. An average size of graphene quantum dots of the graphene quantum dot coating layer is 100 nm or less. The first conductive semiconductor base layer and the first conductive semiconductor core include n-type gallium nitride (GaN). The second conductive semiconductor layer includes p-type GaN. The active layer has a multi-quantum-well structure. The graphene quantum dot coating layer is mounted in the multi-quantum-well structure. USE - Three-dimensional graphene quantum dot (GQD) light-emitting device for light amplification, mounted on external device such as package substrate. ADVANTAGE - The light-emitting device is capable of improving light extraction and light amplification. A crystal defect due to lattice mismatch is decreased and an internal quantum efficiency of the light-emitting device is increased by increasing a content of indium (In). A light emitting surface is relatively wider so that a light efficiency is increased, since the nanowire has such a three-dimensional shape. A width of the first conductive semiconductor core is greater than that of the opening, a crystal is regrown, and the crystallinity of the first conductive semiconductor core is improved. The charge blocking layer serves to prevent a charge injected from the first conductive semiconductor core from moving to the second conductive semiconductor layer without being used for recombination of an electron and a hole in the active layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a light-emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram illustrating a process of manufacturing a three-dimensional graphene quantum dot (GQD) light-emitting device.