▎ 摘　　要

NOVELTY - The method comprises: providing a work piece (102) including a conductive feature formed in a first insulating material (104) and a second insulating material having an opening over the conductive feature (106); forming a graphene-based conductive layer (110) over an exposed top surface of the conductive feature within the opening in the second insulating material; patterning a second insulating material to form a second opening having sidewalls; and forming a carbon-based adhesive layer (112) over sidewalls of the opening in the second insulating material. USE - The method is useful for manufacturing a semiconductor device (claimed) that is useful in personal computers, cell phones and digital cameras. ADVANTAGE - The method is capable of easily manufacturing the semiconductor device with reduced size, improved performance, high current density and superior electrical, thermal and mechanical properties. DETAILED DESCRIPTION - The method comprises: providing a work piece (102) including a conductive feature formed in a first insulating material (104) and a second insulating material having an opening over the conductive feature (106); forming a graphene-based conductive layer (110) over an exposed top surface of the conductive feature within the opening in the second insulating material; patterning a second insulating material to form a second opening having sidewalls; forming a carbon-based adhesive layer (112) over sidewalls of the opening in the second insulating material; depositing a catalyst on the graphene-based conductive layer; and forming a carbon nano-tube (CNT) in the patterned second insulating material over the graphene-based conductive layer and the carbon-based adhesive layer. The second insulating material is disposed over the first insulating material. The method further comprises: simultaneously forming the graphene-based conductive layer and the carbon-based adhesive layer; forming a third insulating material over the CNT's and the second insulating material; patterning the third insulating material to form an opening over top surfaces of each of the CNT's; forming a conductive material in the patterned third insulating material, where the conductive material is formed over the second insulating material and CNT's; growing the CNT's within the second opening; and filling interspaces between the CNT's with metal. The step of forming the graphene-based conductive layer and carbon-based adhesive layer: comprises a gas-phase growth process using a methane precursor; and a process including chemical vapor deposition (CVD), atmospheric pressure CVD, low-pressure CVD at a sub-atmospheric pressure, plasma enhanced CVD, and/or atomic layer CVD. The step of forming the graphene-based conductive layer: comprises forming graphene sheets; and forming a first graphene-based conductive layer. The graphene-based conductive layer reduces a contact resistance of a via interconnect. A second graphene-based conductive layer is formed on a top surface of the CNT. The step of forming the carbon-based adhesive layer comprises forming amorphous carbon. The step of forming the conductive feature comprises a damascene process or a subtractive etch process. The graphene-based conductive layer and the carbon-based adhesive layer are simultaneously formed in a chamber into which a gas flow of methane, hydrogen and argon is introduced. The step of forming CNT's comprises forming the via interconnect. The step of forming the conductive material comprises encapsulating the CNT's with the conductive material. The conductive feature comprises a first conductive feature. The conductive material in the patterned third insulating material comprises a second conductive feature. The second opening exposes a portion of the patterned conductive feature. The step of depositing a catalyst on the graphene-based conductive layer comprises depositing iron on the graphene-based conductive layer, but not on the carbon-based adhesive layer. DESCRIPTION OF DRAWING(S) - The figure shows a schematic perspective view of a method of manufacturing a semiconductor device. Work piece (102) First insulating material (104) Conductive feature (106) Graphene-based conductive layer (110) Carbon-based adhesive layer. (112)