• 专利标题:   Method for producing large-area graphene, involves lowering penetrating rate continuously, so that carbon source penetrating substrate forms re-crystallization and precipitates.
  • 专利号:   CN108341408-A
  • 发明人:   SONG J, LIU J, WANG S, WANG H, ZANG B, LIN Y, LIN H
  • 专利权人:   HENAN GRAPHENE SYNTHETIC MATERIALS CO
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN108341408-A 31 Jul 2018 C01B-032/184 201856 Pages: 5 Chinese
  • 申请详细信息:   CN108341408-A CN10059771 24 Jan 2017
  • 优先权号:   CN10059771

▎ 摘  要

NOVELTY - The method involves providing (S1) a substrate made of cobalt-copper alloy or nickel-copper alloy, and arranging (S2) a carbon source on the substrate. The substrate material consists of cobalt or nickel. The substrate is heated (S3) in a heating furnace which provides a heating temperature between 1000 degrees C and 1300 degrees C. The room temperature is maintained for a predetermined period of time to allow the carbon source to penetrate the substrate. The furnace is cooled at a temperature between 0.1 degrees C/min and 5 degrees C/min. The penetrating rate is continuously lowered, so that the carbon source penetrating the substrate forms re-crystallization and precipitates. A graphene is attached to the substrate. The graphene has Raman spectroscopy between 1 mu m and 50 mu m. USE - Method for producing a large-area graphene (claimed). ADVANTAGE - Graphene having small area is manufactured efficiently. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a large area graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the method for producing a large-area graphene. (Drawing includes non-English language text) Providing a substrate (S1) Arranging carbon source on substrate (S2) Heating substrate (S3) Reducing temperature in heating furnace (S4)