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  • 专利标题:   Semiconductor type sulfur doped graphene film comprises sulfur source, graphite, silica gel, mica, water ink stone, adhesive, copper powder, conductive powder, carbon black N300, reinforcing agent, calcium carbonate, and antioxidant.
  • 专利号:   CN112028548-A
  • 发明人:   ZHI W, ZHANG P, WU J, CHAI L, ZHANG Z, WANG Z
  • 专利权人:   DATONG XINCHENG NEW MATERIAL CO LTD
  • 国际专利分类:   C04B111/20, C04B111/28, C04B111/94, C04B026/32, C04B040/02
  • 专利详细信息:   CN112028548-A 04 Dec 2020 C04B-026/32 202002 Pages: 7 Chinese
  • 申请详细信息:   CN112028548-A CN10651340 08 Jul 2020
  • 优先权号:   CN10651340

▎ 摘　　要

NOVELTY - Semiconductor type sulfur doped graphene film comprises 20-30 pts. wt. sulfur source, 30-50 pts. graphite, 20-40 pts. silica gel, 5-10 pts. mica, 2-6 pts. water ink stone, 6-12 pts. adhesive, 6-12 pts. copper powder, 1-4 pts. conductive powder, 8-16 pts. carbon black N300, 4-10 pts. reinforcing agent, 3-9 pts. calcium carbonate and 3-8 pts. antioxidant. The sulfur source comprises silver gallium sulfide, silver, tungsten sulfide and cadmium sulfide. USE - Used as semiconductor type sulfur doped graphene film. ADVANTAGE - The film has convenient preparation and operation, improves high temperature resistance, and avoids affecting the service life. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing semiconductor type sulfur doped graphene film.