• 专利标题:   Graphene transfer method based on metal silver sacrificial layer by using chemical vapor deposition method to grow graphene on metal substrate, depositing silver on graphene, spin coating polymethyl methacrylate and etching metal substrate.
  • 专利号:   CN113401893-A
  • 发明人:   LI Q, SUN M, CHEN W, XU M, PENG H
  • 专利权人:   UNIV GUANGXI NORMAL
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN113401893-A 17 Sep 2021 C01B-032/186 202192 Pages: 8 Chinese
  • 申请详细信息:   CN113401893-A CN10566155 24 May 2021
  • 优先权号:   CN10566155

▎ 摘  要

NOVELTY - Graphene transfer method based on metal silver sacrificial layer involves using chemical vapor deposition method to grow graphene on metal substrate to obtain first sample sheet, uniformly depositing silver on graphene to obtain second sample sheet, spin coating polymethyl methacrylate on second sample sheet to obtain third sample sheet, etching metal substrate in third sample sheet by etching liquid to obtain fourth sample sheet, transferring fourth sample sheet to target substrate to obtain fifth sample sheet, removing polymethyl methacrylate in fifth sample sheet, and etching silver. USE - The method is used for graphene transferring based on metal silver sacrificial layer. ADVANTAGE - The method avoids direct contact between graphene and polymethyl methacrylate, graphene from being in heavy phosphorus-doped state and organic matter in graphene transfer process residue, fully expands graphene in uniform coverage of metallic silver, facilitates transfer of graphene to target substrate, and uniformly deposits silver produced by reaction of silver ammonia solution and glucose on surface of graphene.