• 专利标题:   Sensor for detecting virus particles, comprises substrate, field effect transistor (FET), and a two-dimensional virus sensing transduction material film formed on the FET.
  • 专利号:   WO2023034113-A2, WO2023034113-A3
  • 发明人:   WU C, HUANG Y, KIM D, WANG Y, LI Y, WANG R, LI J, ZHANG Y
  • 专利权人:   UNIV MISSOURI
  • 国际专利分类:   A61B005/29, A61N001/05, G01N027/414, G01N033/50, G01N033/53, G01N033/569
  • 专利详细信息:   WO2023034113-A2 09 Mar 2023 A61B-005/29 202322 Pages: 43 English
  • 申请详细信息:   WO2023034113-A2 WOUS041497 25 Aug 2022
  • 优先权号:   US238454P

▎ 摘  要

NOVELTY - Sensor for detecting virus particles, comprises a substrate (104), a field effect transistor (FET), the FET comprising source electrodes (106) and drain electrodes (108) formed on the substrate, and a two-dimensional virus sensing transduction material (VSTM) (102) film formed on the FET, the VSTM film configured to collect a sample collected from a subject, the VSTM film comprising MXene-graphene and having a probe corresponding to the virus particles to be detected linked thereto, where a drain-source current response of the FET is representative of an amount of the virus particles in the sample for indicating an infection. USE - The sensor is useful for detecting virus particles in a sample e.g. bioaerosol, solution, and/or touch, where the virus particle comprises SARS-CoV-2 virus particles and/or influenza A (H1N1) (all claimed). ADVANTAGE - The sensor is sensitive, provides automatic and real-time sensing of influenza and SARS-CoV-2 viruses, improved robustness, and allows minimum sample preparation. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: fabricating a virus sensor; and face mask. DESCRIPTION OF DRAWING(S) - The figure illustrates MXene-graphene field effect transistor (FET) sensor. 102Ultrasensitive virus sensing transduction material 104Substrate 106Source electrode 108Drain electrodes 112Microfluid receiver