• 专利标题:   High transmittance conductive film, has middle layer that is formed of p-type semiconductor oxide film connected to top layer of film formed of nitrogen doped graphene films.
  • 专利号:   CN105551580-A, CN105551580-B
  • 发明人:   CAO M, CHEN P, QIAN J, XIA R, SU L, YANG B, ZHENG Z, MIAO J
  • 专利权人:   UNIV ANHUI
  • 国际专利分类:   H01B001/04, H01B001/08, H01B013/00, H01B005/14
  • 专利详细信息:   CN105551580-A 04 May 2016 H01B-005/14 201636 Pages: 6 English
  • 申请详细信息:   CN105551580-A CN10998333 24 Dec 2015
  • 优先权号:   CN10998333

▎ 摘  要

NOVELTY - The transmittance conductive film has a glass substrate that is formed using three layers of film combination such as the bottom layer, middle layer and the top layer. The middle layer is p-type semiconductor oxide film connected to the top layer of the film formed of nitrogen doped graphene films. The reflection film is nano silicon dioxide (SiO2) film. USE - High transmittance conductive film. ADVANTAGE - The conductive film is simple in design and the equipment requirements are not high. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of high transmittance conductive film. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of the high transmittance conductive film. (Drawing includes non-English language text)