▎ 摘　　要

NOVELTY - A semiconductor device comprises a ribbon-shaped catalyst layer (20) used as catalyst for boron nitride formed on a crystal substrate (10) having insulating properties, a layer (30) containing ribbon-shaped boron nitride formed of hexagonal boron nitride, boron carbonitride, or cubic-boron carbonitride, for covering the catalyst layer, a ribbon-shaped graphene (40) for covering the layer containing boron nitride, and a source electrode (52) and drain electrode (53), formed on the graphene. USE - Semiconductor device is used for field effect transistor. ADVANTAGE - The semiconductor device has favorable characteristics, and is obtained by economical method with high yield. DETAILED DESCRIPTION - A semiconductor device comprises a ribbon-shaped catalyst layer used as catalyst for boron nitride formed on a crystal substrate having insulating properties, a layer containing ribbon-shaped boron nitride formed of hexagonal boron nitride (h-BN), boron carbonitride (BCN), cubic-boron carbonitride (BC2N), or boron carbonitride (BC6N), for covering the catalyst layer, a ribbon-shaped graphene for covering the layer containing boron nitride, and a source electrode and drain electrode formed on the graphene. INDEPENDENT CLAIMS are included for the following: (1) manufacture of ribbon-shaped thin film, which involves forming the catalyst layer on the crystal substrate, heating the crystal substrate, forming the catalyst layer into ribbon shape by forming hexagonal boron nitride (h-BN), boron carbonitride (BCN), cubic-boron carbonitride (BC2N), or boron carbonitride (BC6N), and forming the layer containing ribbon-shaped boron nitride; and (2) manufacture of the semiconductor device, which involves forming ribbon-shaped graphene on the ribbon-shaped boron nitride-containing layer, and forming source electrode and drain electrode on the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view explaining manufacture of the semiconductor device. (Drawing includes non-English language text) Crystal substrate (10) Ribbon-shaped catalyst layer (20) Layer containing boron nitride (30) Ribbon-shaped graphene (40) Source electrode (52) Drain electrode (53)