▎ 摘　　要

NOVELTY - Preparing low square resistance, ultra-clean graphene transparent electrode, comprises depositing (2-8) layers of graphene on a metal substrate by chemical vapor deposition; processing the substrate with graphene to obtain the processed graphene-grown substrate; placing the processed graphene-grown substrate in an etching solution for etching, cleaning and transferring into the dopant solution, then transferring into the target substrate, and drying to obtain graphene transparent electrode; where the surface tension of the etching solution and the dopant solution is 0.01-1000 N/m. USE - The method is useful for preparing low square resistance, ultra-clean graphene transparent electrode. ADVANTAGE - The graphene film has no impurities on the surface; the dopant is located between the few-layer graphene and the substrate, and the few-layer graphene with fewer defects reduces the chance of contact between the dopant and the outside world. The square resistance of the graphene film remains stable for a long time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for low square resistance, ultra-clean graphene transparent electrode.