▎ 摘　　要

NOVELTY - The detector has a complementary metal-oxide semiconductor (CMOS) infrared sensing structure provided with three layers of metal interconnection layer, a dielectric layer and multiple interconnection through holes. A CMOS measuring circuit system is provided with a front-level mirror image pixel and a row-level row-selection switch. A column-level analog-to-digital (RDL) circuit is connected with an output end of a row circuit. An input end of an input end-end circuit is fixedly connected with the output end-side of the row circuit, where the row-side analog-side row is fixed in a front side of a rear side of the RDL circuit. A front end of the front end-stage circuit is electrically connected with a corresponding first columnar structure. First columnar structure is directly electrically connected with the supporting base in the reflecting layer and the corresponding beam structure. USE - Multi-layer structure infrared detector for use in monitoring market, vehicle auxiliary market, household market, intelligent manufacturing market and mobile phone application field. ADVANTAGE - The multi-layer structure infrared detector has low performance, low pixel scale, low yield and bad consistency, optimizes the planarization degree of the absorption plate, reduces the heat conductivity of the beam structure, and optimize the performance of the infrared detector.