• 专利标题:   Preparation method for graphene nanoribbons for sensor involves forming pattern on resist layer and chromium layer, followed by forming graphene pattern using pattern as mask.
  • 专利号:   US2015362470-A1, KR2015142269-A, US9606095-B2, KR1831017-B1
  • 发明人:   JUNG G, PAK Y, PARK Y S, JUNG G Y
  • 专利权人:   JUNG G, PAK Y, GWANGJU INST SCI TECHNOLOGY
  • 国际专利分类:   G01N033/00, G01N027/30, G03F007/00, C01B031/02
  • 专利详细信息:   US2015362470-A1 17 Dec 2015 G01N-033/00 201601 Pages: 10 English
  • 申请详细信息:   US2015362470-A1 US585750 30 Dec 2014
  • 优先权号:   KR070750

▎ 摘  要

NOVELTY - The preparation method involves sequentially forming a chromium layer (30) and resist layer (40) on a graphene layer (20), and forming a pattern on the resist layer and chromium layer, followed by forming a graphene pattern using the pattern as a mask. The chromium pattern is formed using the resist layer as a mask, and the graphene layer is etched using the chromium pattern as a mask. The resist pattern is formed, and the chromium pattern is formed by etching the chromium layer using the resist pattern as a mask. USE - Preparation method for graphene nanoribbons for sensor (claimed). ADVANTAGE - Exhibits good properties in terms of sensitivity, response speed, repeatability, and stability since the graphene ribbons with nanoscale thickness and width can be used as base layer of the sensor. Laser interference lithography allows a large area resist pattern to be realized at low cost within short period of time. The method is also simple to implement as compared with an existing metal pattern manufacturing process which requires deposition of metal layer and lift-off of used photo-resists with organic materials after patterning. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a sensor. DESCRIPTION OF DRAWING(S) - The drawing shows sectional views of the preparing method for graphene nanoribbons. Substrate (10) Graphene layer (20) Chromium layer (30) Resist layer (40)