▎ 摘　　要

NOVELTY - The preparation method involves sequentially forming a chromium layer (30) and resist layer (40) on a graphene layer (20), and forming a pattern on the resist layer and chromium layer, followed by forming a graphene pattern using the pattern as a mask. The chromium pattern is formed using the resist layer as a mask, and the graphene layer is etched using the chromium pattern as a mask. The resist pattern is formed, and the chromium pattern is formed by etching the chromium layer using the resist pattern as a mask. USE - Preparation method for graphene nanoribbons for sensor (claimed). ADVANTAGE - Exhibits good properties in terms of sensitivity, response speed, repeatability, and stability since the graphene ribbons with nanoscale thickness and width can be used as base layer of the sensor. Laser interference lithography allows a large area resist pattern to be realized at low cost within short period of time. The method is also simple to implement as compared with an existing metal pattern manufacturing process which requires deposition of metal layer and lift-off of used photo-resists with organic materials after patterning. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a sensor. DESCRIPTION OF DRAWING(S) - The drawing shows sectional views of the preparing method for graphene nanoribbons. Substrate (10) Graphene layer (20) Chromium layer (30) Resist layer (40)