▎ 摘　　要

NOVELTY - Photodiode based on graphene/tungsten ditelluride/germanium hybrid heterojunction, comprises a graphene/tungsten ditelluride/germanium mixed-dimensional heterojunction, an insulating layer, a source electrode and a drain electrode. The heterojunction is abbreviated as Gr/WTe2/Ge. The Gr/WTe2/Ge mixed-dimensional heterojunction is to grow an insulating layer film on the surface of the Ge substrate first, and etch the insulating layer in the middle of the Ge substrate to obtain a Ge window, transfer the WTe2 nanosheets to the Ge window, and transfer the Gr nanosheets to the WTe2 nanosheets to form. The source and drain electrodes are distributed on both sides of the edge of the Ge window. The source electrode is in contact with the Ge substrate, while the drain electrode is in contact with the WTe2 nanosheets and the Gr nanosheets, and the Gr nanosheets are also in contact with the drain electrode and the WTe2 nanosheets. USE - The photodiode is used in the field of photoelectric detector or infrared imaging (claimed). ADVANTAGE - The photodiode has excellent self-driving photoelectric response performance in the wavelength range of 532-2200 nm, high light sensitivity and fast response time, has good visible-near-infrared light detection capability, good air stability, and high specific detection rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of the photodiode based on graphene/tungsten ditelluride/germanium hybrid heterojunction.