▎ 摘　　要

NOVELTY - A substrate comprising metal material is cleaned, dried, placed in reaction chamber, protective gas is introduced at 10-1000 sccm for 10-60 minutes, heated to 900-1100 degrees C, reducing gas at 10-200 sccm is introduced for 5-10 minutes, graphite oxide powder is added at the rate of 1-10 g/minute, reacted for 10-60 minute, addition of graphite oxide powder and inlet protective gas flow are terminated and cooled to room temperature, to obtain substrate surface containing graphene. USE - Manufacture of graphene used for automation. ADVANTAGE - The method effectively provides graphene with high efficiency by simple process in short period of time.