▎ 摘　　要

NOVELTY - The utility model claims a tunnel Darner graphene nanometer with field effect transistor, comprising a source, a drain, a channel, a source region, a drain region, a SiO2 oxide layer and the double-gate, the channel is a graphene nano-strip; the source region is located between the source electrode and a channel; drain region is located between the drain electrode and the channel, source and drain regions are doped graphene nano-tube; the source region comprises a P-type heavily doped region and a P-type light doped region and a P-type lightly doped region close to the channel, P-type heavily doped region close to the source, the drain region comprises an N-type heavily doped region and the N-type light doped region; N-type lightly doped region close to the channel, N-type heavily doped region close to the drain; two sides of the channel are respectively provided with a SiO2 oxide layer, a SiO2 oxide layer cover the channel, the source region and the drain region, double gate comprises two sub-grid, sub-grid electrode located outside the SiO2 oxide layer includes three kinds of sub-gate work function different from the metal block. The utility model has a greater switching current ratio.