▎ 摘　　要

NOVELTY - The method involves placing the patterned substrate in a graphene growth system, heating the system to 300-500 degrees C under argon and oxygen atmosphere. The system temperature is raised to 900-1000 degrees C within 30 minutes, 50 ccm of hydrogen is introduced, the nucleation process begins, and the nucleation process time is 10 minutes. The nozzle corresponding to the substrate pattern is used to carry out the fixed point carbon source transportation. A methane flow rate of 5sccm is passed for fixed point nucleation for graphene growth, and growth time is 30-60minutes. The growth is finished, cooled and sampled. USE - Method for growing large-area single crystal graphene. ADVANTAGE - The method has high controllability and good repeatability, and is favorable for the growth of large-area single crystal graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a nozzle in a combined growth apparatus of the method for growing large-area single crystal graphene.