• 专利标题:   Graphene heterojunction substrate transfer device, has transfer chamber provided with etching chamber and storage chamber, where etching chamber is formed with through hole that is connected with storage chamber.
  • 专利号:   CN210110726-U
  • 发明人:   KONG W, ZHAO Y
  • 专利权人:   HEFEI ORIGIN QUANTUM COMPUTATION TECHNOL
  • 国际专利分类:   C23C016/26, C23C016/30, C23C016/44, H01L021/67, H01L029/16, H01L029/165, H01L029/225
  • 专利详细信息:   CN210110726-U 21 Feb 2020 H01L-021/67 202019 Pages: 16 Chinese
  • 申请详细信息:   CN210110726-U CN21114201 16 Jul 2019
  • 优先权号:   CN21114201

▎ 摘  要

NOVELTY - The utility model belongs to the manufacturing field of graphene transistor, specifically claims a graphene heterojunction substrate transfer device, comprising an airtight transfer chamber, the transfer chamber comprises a etching chamber and the storage chamber; the etching chamber and the storage chamber horizontally adjacent set; the etching chamber is adjacent to the storage chamber wall is provided with a first through hole connected with the etching chamber and the storage chamber, the etch chamber containing the first substrate for etching the first solution and/or the second solution is used for diluting the first solution; the storage chamber storing the second substrate; the second substrate into the etching chamber, used for bonding with the graphene heterojunction is etched on the first substrate after passing through the first through hole from the storage chamber. The utility model can overcome the peeling in the prior art graphene heterojunction raw substrate and adhered to the desired substrate need to switch the complex process flow caused by the operating environment of the defect of graphene heterojunction easy to deform.