▎ 摘　　要

NOVELTY - An LED semiconductor device comprises a device main unit including an LED base (120) and a top plate (130) arranged on top of the LED base, a connecting frame (140) provided between the LED base and the top plate, and an outer shell (110) arranged outside the LED base and the top plate. The LED semiconductor device is arranged at the bottom of the LED base. The device main unit further includes a circulating heat absorption device (200) including an outer plate, side plate provided on both sides of the outer panel, a graphene structure arranged in a cavity formed by closing the side plate and the outer plate, circulation holes opened at the bottom of the outer plate, an inner plate, which is arranged in the cavity, and has an arc structure, an extrusion cavity formed between the inner plate and the inner wall of the outer plate, a circulation cavity formed in the inner plate, and a return plate provided outside the outer plate. USE - The LED semiconductor device is useful for realizing circulation radiating effect based on graphene material technology. ADVANTAGE - The LED semiconductor device: improves the heat dissipation efficiency of hot air by using deceleration cycle; ensures that the hot air is discharged from the circulation hole after sufficient heat dissipation, and the utilization rate of the graphene structure can be improved after circulation; and solves the problem of large volume occupied by the use of a large number of layers of the graphene structure. DETAILED DESCRIPTION - An LED semiconductor device comprises a device main unit including an LED base (120) and a top plate (130) arranged on top of the LED base, a connecting frame (140) provided between the LED base and the top plate, and an outer shell (110) arranged outside the LED base and the top plate. The LED semiconductor device is arranged at the bottom of the LED base. The device main unit further includes a circulating heat absorption device (200) including an outer plate, a side plate provided on both sides of the outer panel, a graphene structure arranged in a cavity formed by closing the side plate and the outer plate, circulation holes opened at the bottom of the outer plate, an inner plate, which is arranged in the cavity, and has an arc structure, an extrusion cavity formed between the inner plate and the inner wall of the outer plate, a circulation cavity formed in the inner plate, and a return plate provided outside the outer plate. The bottom end of the inner plate is connected with the inner wall of the outer plate near the side of the circulation hole, so that the bottom of the outer plate forms an inlet cavity. The graphene structure is arranged in the inner plate, and forms an integrated structure with the inner plate. The return plate includes an outer cover, which is arranged around the outside of the outer plate and forms a reflux cavity, a three-way cavity formed between the return cavity and the circulation hole, and splitter plates arranged inwardly of the three-way cavity at the bottom to guide the hot air to improve the stability of the hot air output. One side of three-way cavity is always connected with the circulation hole, and the other side is connected to the return cavity whose end is bent to the side close to the inlet cavity. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the whole structure of the LED semiconductor device. Outer shell (110) LED base (120) Top plate (130) Connecting frame (140) Circulating heat absorption device (200)