• 专利标题:   Forming graphene film on copper-containing substrate surface involves heating and exposing substrate to carbon-containing precursor gas and cooling to segregate dissolved carbon atom and selecting substrate to control graphene film depth.
  • 专利号:   GB2498944-A
  • 发明人:   DONG G, RIJN R V
  • 专利权人:   RIJKSUNIV LEIDEN
  • 国际专利分类:   C01B031/04, H01L021/02
  • 专利详细信息:   GB2498944-A 07 Aug 2013 H01L-021/02 201355 Pages: 23 English
  • 申请详细信息:   GB2498944-A GB001600 31 Jan 2012
  • 优先权号:   GB001600

▎ 摘  要

NOVELTY - Forming a graphene film (20) on copper-containing substrate surfaces, comprises: (a) heating copper-containing substrate; (b) exposing the substrate to a carbon-containing precursor gas at the exposure temperature to dissolve carbon atoms (16) into the substrate and to saturate the substrate with carbon atoms; (c) cooling the substrate to segregate the dissolved carbon atoms from the substrate to form a graphene film on the substrate surface; and (d) selecting the copper-containing substrate to control depth of the graphene film to segregate the dissolved carbon atoms from the substrate. USE - The method is useful for forming graphene film (claimed), which is useful in electronics, lasers, bio-sensors, atomically thin protective coatings and hydrogen storage and energy storage applications. ADVANTAGE - The graphene film exhibits higher carrier mobility than the conventional semiconductor materials, thus improving the speed of fast and flexible electronics including microprocessors. DETAILED DESCRIPTION - Forming a graphene film (20) on one or more surfaces of a copper-containing substrate, comprises: (a) heating a copper-containing substrate defining one or more surfaces to an exposure temperature; (b) exposing the substrate to a carbon-containing precursor gas at the exposure temperature for a predetermined period of time to dissolve carbon atoms (16) into the substrate and saturate the substrate with carbon atoms; and (c) cooling the substrate to segregate the dissolved carbon atoms from the substrate to form a graphene film on the or each surface of the substrate, where the method further comprises selecting the copper-containing substrate on the basis of its thickness to control a depth (tg) of the graphene film formed on the or each surface of the substrate on cooling the substrate to segregate the dissolved carbon atoms from the substrate. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the segregation of dissolved carbon atoms to form a graphene film on the planar surfaces of copper substrate. Planar surfaces (10) Copper substrate (12a) Carbon atoms (16) Graphene film (20) Depth of graphene film. (tg)