▎ 摘　　要

NOVELTY - A graphene quantum dot light emitting device (100) comprises: a first grapheme (20); a graphene quantum dot layer (30) disposed on the first graphene and comprising graphene quantum dots; and a second grapheme (40) disposed on the graphene quantum dot layer. The first graphene is an n-type graphene, and the second graphene is a p-type graphene. The device comprises an electron transport layer (ETL) and; hole transport layer (HTL). USE - As graphene quantum dot light emitting device (claimed). ADVANTAGE - The graphene quantum dot light emitting device reduces the band gap of the graphene quantum dot layer by adjusting the size and shape of the graphene quantum dots. Therefore, the light emitting efficiency of the graphene quantum dot light emitting device is improved. The light emitting efficiency is higher than that of the conventional quantum dot light emitting device. The light emitting device is formed of the graphene, and thus, flexible light emitting devices of various designs is realized. Also, lifespan of the graphene quantum dot light emitting device is longer than that of the conventional quantum dot light emitting device, since the graphene quantum dots are more durable than quantum dots based on semiconductors. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing a graphene quantum dot light emitting device involving forming a first graphene doped with a first dopant; forming a graphene quantum dot layer comprising graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a graphene quantum dot light emitting device. Substrate (10) First grapheme (20) Graphene quantum dot layer (30) Second grapheme (40) First contact pad (50) Second contact pad (55) Graphene quantum dot light emitting device (100)