▎ 摘　　要

NOVELTY - Nanocrystalline graphene comprises: grains in a stack of graphene sheets, where the nanocrystalline graphene has a grain density of 500 ea/μ m2or higher and a root-mean-square (RMS) roughness of 0.1-1. USE - The nanocrystalline graphene is used as a barrier layer for a device, used for a Complementary Metal-Oxide-Semiconductor (CMOS) process, and used to form an element of a semiconductor device such as a barrier metal or the source/drain contact or to manufacture a pellicle of an exposure apparatus. ADVANTAGE - The method directly grows the nanocrystalline graphene on the surface of the substrate at the relatively low temperature so that the technique may be applied. The nanocrystalline graphene has excellent quality, and may be directly grown and formed on a surface of a substrate even at a relatively low temperature of 700° C or lower in a relatively short period of time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of forming a nanocrystalline graphene, comprising injecting a reaction gas comprising a carbon source gas and an inert gas into a reaction chamber, generating a plasma of the reaction gas in the reaction chamber, and growing the nanocrystalline graphene directly on a non-catalytic substrate using the plasma of the reaction gas at 700° C or lower, where the nanocrystalline graphene includes grains in a stack of graphene sheets, where the nanocrystalline graphene has a grain density of 500 ea/μ m2or higher and a root-mean-square (RMS) roughness of 0.1-1.