• 专利标题:   Terahertz photoelectric detector, has surface cover fixed with medium layer, and single layer graphene part receiving bias voltage according to photoconductive characteristic peak position to realize terahertz frequency detection process.
  • 专利号:   CN103715291-A, CN103715291-B
  • 发明人:   WANG F, CAO J
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   H01L031/08
  • 专利详细信息:   CN103715291-A 09 Apr 2014 H01L-031/08 201435 Pages: 12 Chinese
  • 申请详细信息:   CN103715291-A CN10746552 30 Dec 2013
  • 优先权号:   CN10746552

▎ 摘  要

NOVELTY - The detector has a surface cover fixed with a medium layer that is fixed with a substrate. The medium layer is arranged on a surface of a single layer graphene part. A metal electrode is fixed on the single layer graphene part that is fixed with a voltage change electric current source. The single layer graphene part receives bias voltage according to photoconductive characteristic peak position to realize terahertz frequency detection process. The substrate is formed as an N type heavily doped silicon substrate. Two metal electrodes are made of gold, silver and aluminum material. USE - Terahertz photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a terahertz photoelectric detector.