• 专利标题:   Formation of graphene wrinkle pattern used for graphene structure, involves forming wrinkle-providing layer on graphene layer, forming substrate on wrinkle-providing layer, and forming wrinkles on wrinkle-providing layer by heat treatment.
  • 专利号:   WO2017213447-A1, KR2017140448-A, KR1884060-B1, US2019106326-A1
  • 发明人:   PARK W, CHUN S
  • 专利权人:   UNIV HANYANG IUCFHYU, UNIV HANYANG IUCFHYU
  • 国际专利分类:   C01B032/182, C01B033/12, C08L033/12, C08L039/06, C01B031/04, C01B032/194
  • 专利详细信息:   WO2017213447-A1 14 Dec 2017 C01B-032/182 201802 Pages: 23
  • 申请详细信息:   WO2017213447-A1 WOKR005981 09 Jun 2017
  • 优先权号:   KR072136

▎ 摘  要

NOVELTY - Formation of graphene wrinkle pattern involves forming (S100) a wrinkle-providing layer having thermal expansion coefficient (c1) on one surface of a graphene layer, forming (S110) a substrate having a thermal expansion coefficient (c2) on one surface of the wrinkle-providing layer, and performing heat treatment (S120) to form a wrinkle on the wrinkle-providing layer through a difference between the thermal expansion coefficient values (c1) and (c2). USE - Formation of graphene wrinkle pattern used for graphene structure (claimed) for supercapacitor, strain sensor, and purifier. ADVANTAGE - The method enables simple and efficient formation of graphene wrinkle pattern with high quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene structure. DESCRIPTION OF DRAWING(S) - The drawing shows flowchart of formation of graphene wrinkle pattern. (Drawing includes non-English language text) Formation of wrinkle-providing layer (S100) Formation of substrate (S110) Heat-treatment process (S120)