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  • 专利标题:   Manufacture of graphene quantum dot involves forming carbon source beams by injecting carbon sources into thermal plasma jet, thermally decomposing carbon source, and flowing carbon source beams into tube connected to anode.
  • 专利号:   WO2013187652-A1, KR2013138692-A, KR1475928-B1, US2015087138-A1, US9278863-B2, US2016137508-A1
  • 发明人:   SUH J S, KIM J H, KIM J, LEE M W
  • 专利权人:   UNIV SEOUL NAT R DB FOUND, SNU R DB FOUND, SUH J S, KIM J H
  • 国际专利分类:   B01J019/12, C01B031/02, C01B031/04, C09K011/65, H01L021/02, B82Y015/00, B82Y040/00
  • 专利详细信息:   WO2013187652-A1 19 Dec 2013 C01B-031/02 201402 Pages: 36
  • 申请详细信息:   WO2013187652-A1 WOKR005109 11 Jun 2013
  • 优先权号:   KR062115, KR066141

▎ 摘　　要

NOVELTY - Manufacture of graphene quantum dot involves using thermal plasma forming carbon source beams by injecting carbon sources into a thermal plasma jet (130) and thermally decomposing the carbon sources, and flowing the carbon source beams into a tube (230) connected to an anode (170). USE - Manufacture of graphene quantum dot (claimed). ADVANTAGE - The method enables manufacture of high-quality and transparent graphene quantum dot having excellent stability, electroconductivity and flexibility. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of apparatus for manufacturing graphene quantum dot. Inlet port (110) Thermal plasma jet (130) Anode (170) Power source (210) Tube (230)