▎ 摘　　要

NOVELTY - The method involves weighing an appropriate amount of zinc source and manganese source powder, and mixing evenly by ball milling. The mixed powder is mixed with an organic binder and mixed uniformly, and pressed into a round cake-shaped compound. The round cake-shaped composite is calcined at 400-1100 degrees C for 8-10 hours, then cooled to room temperature to obtain a manganese-doped zinc oxide target. A graphene sheet attached to a copper foil as a substrate is cleaned in a container filled with acetone for five minutes, and then dried with hot air. A silver glue is applied to the center of appliance that holds the cleaned substrate, the substrate is put on the silver glue, and the substrate is bonded and fixed with the silver glue. A DC magnetron sputtering device is controlled, the substrate is coated with magnetron sputtering target material, and cooled to room temperature to obtain a manganese-doped zinc oxide diluted magnetic semiconductor film, after the coating is finished. USE - Method for preparing manganese-doped zinc oxide dilute magnetic semiconductor thin film. ADVANTAGE - The target material and substrate are more uniform, the manganese-doped zinc oxide composite film is more stable, and ferromagnetic and photoluminescence properties are excellent, using DC magnetron sputtering technology. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation of the XRD pattern of the doped zinc oxide film plated on the product at preset substrate temperature. (Drawing includes non-English language text)