• 专利标题:   Double-sided diamond-graphene film with double-sided structure, useful in an electrochemical biosensor, comprises a substrate, a doped diamond film, and a graphene film.
  • 专利号:   CN113881929-A
  • 发明人:   WANG B, TAN J, ZHOU K, SHI Z, SHI S, SHI Y, SHI H, WEI Q
  • 专利权人:   HUNAN XINFENG ADVANCED MATERIAL TECHNOLOGY CO LTD
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/27
  • 专利详细信息:   CN113881929-A 04 Jan 2022 C23C-016/02 202244 Chinese
  • 申请详细信息:   CN113881929-A CN11078541 15 Sep 2021
  • 优先权号:   CN11078541

▎ 摘  要

NOVELTY - Diamond-graphene film with double-sided structure comprises a doped diamond film arranged on a substrate. The surface of the substrate is doped with a diamond film. The another opposite surface is provided with a graphene film. The diamond film is formed in a synchronous manner with the graphene film, where the diamond film and the graphene layer are formed as a double-side structure. The graphene layer is formed as an arc-shaped structure, and the diamond layer is arranged on the substrate. USE - The diamond-graphene film is useful in an electrochemical biosensor, which is used in electrochemical oxidation treatment of sewage field. ADVANTAGE - The diamond-graphene film of double-sided structure has excellent conductivity, combining with the diamond can greatly improve the electrochemical catalytic performance, greatly reduce the energy consumption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation method of diamond-graphene film with double-sided structure, which involves: a planting nano diamond seed crystal on the surface of the substrate then the substrate with diamond seed crystal is subjected to hot wire chemical vapour deposition growth to obtain the diamond-graphene film with double-sided structure, when the hot wire vapour deposition the hot wire temperature is 2100-2200degrees Celsius, the hot wire distance is 8-10 mm, the mass flow ratio of the gas is hydrogen; b. Methane doping gas source = 98 2 0 3-0 6 the growth pressure is 2-5Kpa the growth temperature is 600-650 degrees C the growth time is 2-6 times each growth for 1 times taking out the substrate shaking the substrate; c. and, continuously growing the single time is 3-6 hours, the doped gas source is selected from at least one of ammonia phosphine borane.