▎ 摘　　要

NOVELTY - Non-volatile memory comprises control gate layer, control gate dielectric layer, floating gate layer and tunnelling layer which are sequentially arranged, a channel layer and a source/drain electrode. The control gate sheet covers part or all of one surface of the control layer. The floating gate sheet is provided with silicon nitride layer and graphene layer. The graphene layer covers part of the surface of a control sheet facing away from the control sheet. The graphene layer covering part or one of the surfaces of the silicon nitrate layer facing away is provided on the control board. The tunnelling layer covering parts or all surface of graphene layer facing off from the silica layer, and the channel layer covering portion or all surfaces on the surface facing off is provided at the same time. The material of the tunnelling sheet is boron nitride and the material of an indium selenide. USE - The memory is useful in static random access memory, dynamic random access memory and Flash (RTM: Computer multimedia application) memory in a computer. ADVANTAGE - The memory improves the charge retention and read-write speed, reduces the power consumption, and reduces the formation of the wrinkles and cracks of the boron nitride in the transfer process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing non-volatile memory. DESCRIPTION OF DRAWING(S) - The drawing shows a structural diagram of a non-volatile memory (Drawing includes non-English language text). Control gate layer (1001) Control gate dielectric layer (1002) Floating gate layer (1003) Tunnelling layer (1004) Channel layer (1005) Silicon nitride layer (2001) Graphene layer (2002)