▎ 摘　　要

NOVELTY - Graphene-layered structure (S1) comprises: an ion implantation layer in a silicon carbide thin film (1); and a graphenized silicon carbide surface layer (3) on the ion implantation layer. The ion implantation layer is in the silicon carbide thin film by ion-implanting at least one ion of a nitrogen ion (2) and an oxygen ion on a surface of the silicon carbide thin film, and the graphenized silicon carbide surface layer is on the ion implantation layer by heat treating the silicon carbide thin film with the ion implantation layer in it. USE - The graphene-layered structures are useful in a transistor, transparent electrode (all claimed), solar cells, and in channels for memory devices, sensors or electronic paper. ADVANTAGE - The graphene-layered structures: have high conductivity and uniformity of film properties; and are prepared in a simple manner without requiring a transferring process, thus directly growing graphene on a substrate, with minimized defects in the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene-layered structure (S2) comprising: grapheme (6); a silicon nitride layer (4) below the graphene; and a silicon carbide layer below the silicon nitride layer. DESCRIPTION OF DRAWING(S) - The figure shows a diagram illustrating a method of directly growing grapheme. Silicon carbide thin film (1) Nitrogen gas ions (2) Silicon carbide surface layer (3) Silicon nitride layer (4) Graphene (6)