▎ 摘　　要

NOVELTY - A semiconductor structure preparing method involves providing a substrate, and covering the surface of the substrate with etch stop layer, forming metal layer having discrete layers within the substrate, etching the etching stopping layer, and forming underlying metal layer. First graphene layer is formed and a first dielectric layer is located on the storage surface of the graphene layer, and a storage medium layer is located in second layer of the graphene layer, and the first layer is electrically connected to the graphene layer surface and a surface portion of etch stop layer. USE - Method for preparing semiconductor structure. ADVANTAGE - The semiconductor structure has improved conversion efficiency of the flash rate, and optimized electrical properties. DETAILED DESCRIPTION - A semiconductor structure preparing method involves providing a substrate, and covering the surface of the substrate with etch stop layer, forming metal layer having discrete layers within the substrate, etching the etching stopping layer, forming underlying metal layer by using self aligned growth process, forming a layer filled with electrical connector, where the electrical connection layer is electrically connected to the underlying metal layer. First graphene layer is formed and a first dielectric layer is located on the storage surface of the graphene layer, and a storage medium layer is located in the second layer of the graphene layer, and the first layer is electrically connected to the graphene layer surface and a surface portion of etch stop layer. An INDEPENDENT CLAIM is also included for a semiconductor structure.