▎ 摘　　要

NOVELTY - Method for transferring uniform graphene film involves growing continuous graphene on 24-25 mu m thick copper foil surface by chemical vapor deposition, spin-coating with 100 mg/ml poly(methyl methacrylate) using a homogenizer, calcining at 168-172 degrees C for 5-6 minutes, cleaning, placing in iron trichloride solution with concentration of 5 mol/L, etching copper foil for 25-35 minutes, adding to deionized water for 8-12 minutes, adding to 5 mol/L iron trichloride solution to etch residual copper foil, removing floc on foil, washing with deionized water, cleaning with dilute hydrochloric acid, washing with deionized water, adding silica/silicon, beating, air-drying for 2.5-3 hours, placing in a tube furnace for low-pressure annealing, spin-coating with poly(methyl methacrylate), etching in 1 mol/L hydrofluoric acid, washing with deionized water, transferring to polyethylene terephthalate target substrate, and obtaining graphene/poly(methyl methacrylate)/polyethylene terephthalate film. USE - Method for transferring uniform graphene film in manufacture of transparent electrode. ADVANTAGE - The method enables simple and economical transfer of uniform graphene film having excellent flatness and electroconductivity.