• 专利标题:   Manufacture of graphene e.g. carbon nanotube used for manufacturing semiconductor device, involves supplying carbon-containing gas to catalyst metal layer, heating catalyst metal layer by irradiating laser-beam and cooling.
  • 专利号:   WO2014192955-A1, JP2014231454-A, JP2014237557-A
  • 发明人:   MATSUMOTO T, IZAWA Y
  • 专利权人:   TOKYO ELECTRON LTD, TOKYO ELECTRON LTD
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   WO2014192955-A1 04 Dec 2014 C01B-031/02 201482 Pages: 46 Japanese
  • 申请详细信息:   WO2014192955-A1 WOJP064562 27 May 2014
  • 优先权号:   JP112927, JP119802

▎ 摘  要

NOVELTY - Manufacture of graphene (39) involves supplying carbon-containing gas to catalyst metal layer (38), heating the catalyst metal layer by irradiating laser beam (L), and cooling. USE - Manufacture of graphene e.g. carbon nanotube (claimed) used for manufacturing semiconductor device. ADVANTAGE - The method enables manufacture of graphene with high quality and productivity, by controlling supply of heat energy. The carbon nanotube has excellent electroconductivity and thermal conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for growing carbon nanotube, which involves forming catalyst metal microparticles by irradiating laser-beam to the catalyst metal layer, and growing carbon nanotube by supplying carbon-containing gas to the catalyst metal microparticles. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of graphene. (Drawing includes non-English language text) Nitride film layer (37) Catalyst metal layer (38) Graphene (39) Laser beam (L) Substrate (W)