▎ 摘　　要

NOVELTY - Wide spectrum response infrared detector based on asymmetric potential barrier energy band structure comprises structure on substrate from bottom to top, substrate insulating layer provided with silicon dioxide, aluminum oxide, poly(methyl methacrylate) (PMMA) and polyimide flexible insulating substrates. A bottom reflective electrode layer is arranged on upper position of bottom reflecting electrode. The n-type two-dimensional layered semiconductor thin film layer comprises transition metal chalcogenides e.g. molybdenum disulfide, molybdenum diselenide, tungsten disulphide and tungsten diselenide. A barrier layer is provided with boron nitride, alumina and alumina as barrier layer. The barrier layer between contact layer (8) and band gap adjustable two-dimensional thin film material layer is connected with control layer (7). The contact layer is formed as n-type two-dimensional (2D) layered semiconductor film layer. USE - Used as wide spectrum response infrared detector based on asymmetric potential barrier energy band structure e.g. ultra-low dark current vertical van der Waals heterojunction high switch ratio wide spectrum response infrared detector. ADVANTAGE - The vertical van der Waals heterojunction infrared light detector can form hetero-junction of atomic level thickness, compared with the traditional light detector, the dark current is smaller, the volume is smaller and it has very high switch ratio and specific detection efficiency. The reflection-type specular structure enhances light absorption and photocurrent collection efficiency to make the obtained p-n hetero junction detector have higher external quantum efficiency. The detection obtain of different wave band by changing the light polarization model the magnetic material iron magnetic transition temperature test polarization sensitive light response by changing the irradiation light wavelength and power, photo-current imaging to observe the infrared light detection performance. DESCRIPTION OF DRAWING(S) - The drawing shows a structural diagram of the ultra-low dark current vertical van der Waals heterojunction high switching ratio wide-spectrum response infrared detector device based on an asymmetric energy band structure of n-b-g-n and p-b-gp structure. 1Substrate insulating layer 2Substrate 7Contact layer 8Contact layer