• 专利标题:   Preparation of regular graphene by chemical gas phase deposition involves placing metal foil or substrate with metal catalyst in reactor without oxygen and water, raising temperature of metal foil or substrate, and adding carbon source.
  • 专利号:   CN102092710-A, CN102092710-B
  • 发明人:   WU B, HUANG L, GENG D
  • 专利权人:   CHINESE ACAD SCI INST CHEM, CHINESE ACAD SCI CHEM INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102092710-A 15 Jun 2011 C01B-031/04 201153 Pages: 10 Chinese
  • 申请详细信息:   CN102092710-A CN10594273 17 Dec 2010
  • 优先权号:   CN10594273

▎ 摘  要

NOVELTY - A regular graphene is prepared by chemical gas phase deposition by placing metal foil or substrate with metal catalyst in a reactor without oxygen and water, raising temperature of metal foil or substrate to 800-1050 degrees C, and adding carbon source to the reactor for reaction to obtain regular graphene. USE - Method of preparing regular graphene (claimed). ADVANTAGE - The method is simple and convenient to operate, and can obtain regular graphene having equiangular hexagonal which is suitable for large scale production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a regular graphene.