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  • 专利标题:   Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.
  • 专利号:   WO2011094204-A2, US2011201201-A1, WO2011094204-A3, US8268180-B2, US2012325405-A1, US9114998-B2
  • 发明人:   ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S
  • 专利权人:   WISCONSIN ALUMNI RES FOUND, WISCONSIN ALUMNI RES FOUND
  • 国际专利分类:   B82B003/00, C01B031/02, H01B001/04, B82Y040/00, H01L021/311, B31D003/00, C23F001/02, B82Y030/00, C01B031/04, C23F001/00, H01L021/306
  • 专利详细信息:   WO2011094204-A2 04 Aug 2011 C01B-031/02 201154 Pages: 37 English
  • 申请详细信息:   WO2011094204-A2 WOUS022393 25 Jan 2011
  • 优先权号:   US298302P, US013531, US592466

▎ 摘　　要

NOVELTY - Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material, where the etch mask comprises a wetting layer in contact with the graphene material, a neutral layer comprising a copolymer disposed over the wetting layer, and a pattern-defining block copolymer layer disposed over the neutral layer. USE - The method is useful for forming a nano-perforated graphene material (claimed). ADVANTAGE - The method efficiently forms a nano-perforated graphene material with improved properties and characteristics.