▎ 摘　　要

NOVELTY - The present invention discloses a charge storing film applied for a memory, and the memory comprises a substrate. The charge storing film at least comprises a tunneling oxide layer, a charge storing layer and a blocking oxide layer. The tunneling oxide layer is disposed on the substrate. The charge storing layer comprises a plurality of graphene nanocrystals and the graphene nanocrystals are disposed on the tunneling oxide layer. The blocking oxide layer is then formed to cover the charge storing layer. The present invention also discloses the method for manufacturing the abovementioned charge storing film and the structure of the memory.