▎ 摘　　要

NOVELTY - Preparing graphene, comprises (i) cleaning metal substrate, and vacuumizing; (ii) heating metal substrate, irradiating UV light source, reacting by preserving heat, and stopping the flow of carbon-containing reaction fluid, and stopping the heating process, cooling to room temperature, taking out the metal substrate, to obtain graphene metal substrate with micro-carrier surface; and (iii) soaking the graphene metal substrate with micro-carrier surface in an etching solution, removing the metal substrate, taking out the filter residue, cleaning, and drying, to obtain the product. USE - The method is useful for preparing graphene (claimed). ADVANTAGE - The method guarantees sheet structure of graphene; has simple preparation method, and low energy consumption; and is economical. DETAILED DESCRIPTION - Preparing graphene, comprises (i) taking a metal substrate, cleaning, and placing in a chemical vapor deposition apparatus of a reaction chamber, sealing the reaction chamber by introducing protective gas, stopping the passage of protective gas, and vacuumizing, and placing the reaction room under vacuum state; (ii) heating the metal substrate at 400-500 degrees C, irradiating metal substrate surface by opening UV light source, and then allowing the carbon-containing fluid to flow at a rate of 50-1000 standard cm3/minute (sccm), reacting by preserving heat for 10-100 minutes, and stopping the flow of carbon-containing reaction fluid, and stopping the heating process, cooling to room temperature, taking out the metal substrate, to obtain graphene metal substrate with micro-carrier surface; and (iii) soaking the graphene metal substrate with micro-carrier surface in an etching solution, removing the metal substrate, taking out the filter residue, cleaning, and drying, to obtain the product.