• 专利标题:   Forming graphene involves pretreating surface for processing using one or more pretreating flowrates of substrate gas scavenging gas composition or annealing gas composition, in presence of one or more pretreating temperatures, to produce contaminant-depleted surface.
  • 专利号:   US2023193456-A1
  • 发明人:   PHILPOTT R, BARAKET M, SHERRILL V
  • 专利权人:   GEN GRAPHENE CORP
  • 国际专利分类:   C23C016/02, C23C016/26
  • 专利详细信息:   US2023193456-A1 22 Jun 2023 C23C-016/02 202354 English
  • 申请详细信息:   US2023193456-A1 US076421 07 Dec 2022
  • 优先权号:   US292533P, US076421

▎ 摘  要

NOVELTY - Forming graphene involves pretreating a surface for processing using one or more pretreating flowrates of a substrate gas scavenging gas composition and/or an annealing gas composition, in presence of one or more pretreating temperatures, to produce a contaminant-depleted surface, and treating contaminant-depleted surface using one or more treating flowrates of annealing gas composition, in presence of one or more treating temperatures, to produce an annealed surface. USE - Method for forming graphene. ADVANTAGE - The method effectively and continuously producing graphene inside a single, continuous, and laterally extending chamber.