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  • 专利标题:   Hydrogen treated graphene surface having specified band gap and hole mobility.
  • 专利号:   KR1456393-B1, EP2862839-A1, US2015110706-A1, CN104555998-A, US9315389-B2, EP2862839-B1, CN104555998-B
  • 发明人:   HONG J I, SON J Y, HONG J, SON J, SUN Z
  • 专利权人:   UNIV YONSEI IND ACADEMIC COOP FOUND, UNIV YONSEI IND FOUND, HONG J, SON J, SAMSUNG ELECTRONICS CO LTD, UNIV YONSEI IND FOUND, UNIV YONSEI INDACADEMIC COOP INST
  • 国际专利分类:   B01J019/12, C01B031/02, C01B031/04, C01B032/194
  • 专利详细信息:   KR1456393-B1 31 Oct 2014 C01B-031/02 201476 Pages: 11
  • 申请详细信息:   KR1456393-B1 KR124100 17 Oct 2013
  • 优先权号:   KR124100, KR081789

▎ 摘　　要

NOVELTY - Hydrogen treated graphene surface having a band gap of 0.5-5 eV, is claimed. USE - Hydrogen treated graphene surface. DETAILED DESCRIPTION - Hydrogen treated graphene surface that satisfies an equation of 10 less than or equal to ID/ID', where I is the intensity of peak having a value of -1, and D and D' denote Raman shifts having values of 1350 cm-1 and 1620 cm-1 respectively, is claimed. The hydrogen treated graphene surface has a band gap of 0.5-5 eV. An INDEPENDENT CLAIM is included for surface treating the graphene comprising performing an indirect plasma treatment over the graphene surface in the presence of hydrogen gas.