▎ 摘　　要

NOVELTY - Manufacturing single step thin film transistor, comprises preparing ink including graphene oxide and/or reduced graphene oxide dispersed solution; forming a pattern on a substrate; and forming a semiconductor channel formed between a source electrode and a drain electrode, which are located at the edge of the pattern by coffee ring effect, where the pattern is formed with graphene oxide and/or reduced graphene oxide. USE - The method is useful for manufacturing single step thin film transistor (claimed). ADVANTAGE - The method is simple and environmentally friendly without requiring photolithography and masking processes, does not require photosensitive liquid and etching solution, and provides material effectiveness unlike traditional spin-coating method.