▎ 摘　　要

NOVELTY - Preparing single atomic layer graphene film, comprises placing silicon carbide substrate in reaction cavity of atomic layer deposition device, feeding carbon source gas into cavity, and using carbon source gas as first reaction precursor to process chemical absorption at surface of the substrate, occurring halogenation between carbon source gas and fed second reaction precursor, and generating corresponding by-product until that carbon source gas at surface of the substrate is completely consumed, and forming the single atomic layer graphene film from the corresponding by-product. USE - The method is useful for preparing single atomic layer graphene film. ADVANTAGE - The method has simple operation, high converting efficiency and low energy consumption. The prepared graphene film is integral in structure and also in its thickness. DETAILED DESCRIPTION - Preparing single atomic layer graphene film, comprises placing the silicon carbide substrate in reaction cavity of an atomic layer deposition device, feeding carbon source gas into the reaction cavity of the atomic layer deposition device, and using the carbon source gas as a first reaction precursor to process chemical absorption at surface of the silicon carbide substrate, occurring halogenation between the carbon source gas and the fed second reaction precursor, and generating corresponding by-product until that the carbon source gas at surface of the silicon carbide substrate is completely consumed, and forming the single atomic layer graphene film from the corresponding by-product at surface of the silicon carbide substrate, after stopping the halogenation. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation the single atomic layer graphene film (Drawing includes non-English language text).