▎ 摘　　要

NOVELTY - The method involves depositing a titanium layer with thickness of 3-20 nm on a base substrate by sputtering process. Graphene is grown on the deposited titanium layer by chemical vapor deposition process under a condition in which temperature of the substrate is about 150-900 degree Celsius. The titanium layer is treated with hydrogen gas before depositing of the graphene, where reactive gas used in chemical vapor deposition process comprises a mixture of hydrogen gas and carbon sources selected from methane, ethane, propane, acetylene, methanol, ethanol and propanol. USE - Transfer-free method for forming a high-quality graphene layer on an electrical device (claimed) e.g. transparent graphene electrode and semiconductor device. Can also be used for capacitors, displays, organic field-effect transistors, solar cells and LEDs. ADVANTAGE - The method enables forming the high-quality graphene layer with improved crystallinity in an easy manner over a large area at low temperature by transfer-free process, without requiring separate transfer process. The method enables increasing concentration of the carbon source, while preventing process pressure from increasing by using the carbon source without using separate atmosphere gas. The method enables fabricating the substrate by growing graphene directly on the base substrate by chemical vapor deposition process, thus minimizing mechanical defects of graphene and achieving improved electrical properties and stable electrical properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electrical device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure for simulating an adsorption position of carbon on a titanium surface.