• 专利标题:   Embedded graphene diode manufacturing method, involves providing copper substrate, depositing layer of nickel metal layer on copper substrate, forming mask layer on nickel metal layer, and doping type of ion to nickel metal layer through mask layer.
  • 专利号:   CN113314403-A
  • 发明人:   SUN D
  • 专利权人:   SHANDONG AOTIAN ENVIRONMENTAL PROTECTION
  • 国际专利分类:   H01L021/04, H01L029/861, H01L029/06
  • 专利详细信息:   CN113314403-A 27 Aug 2021 H01L-021/04 202174 Pages: 8 Chinese
  • 申请详细信息:   CN113314403-A CN10510227 11 May 2021
  • 优先权号:   CN10510227

▎ 摘  要

NOVELTY - The method involves providing a copper substrate. A nickel metal layer is deposited on the copper substrate. A mask layer is formed on the nickel metal layer. The mask layer is provided with multiple openings arranged in array. A copper-nickel alloy region is formed with a copper-nickel alloy region. A graphene layer is formed on a flat surface. A set of electrodes is formed on a graphene region. A ratio of an area of the graphene region and an area of another graphene region is between 1/5-1/3. A ratio of a total area of the electrodes and the total area of the graphene regions is between 1/3 and 1/2. USE - Embedded graphene diode manufacturing method. ADVANTAGE - The breakdown voltage of a diode is improved. A current density of a first electrode and a second electrode is ensured to be close to or a same, so as to prevent a breakdown caused by a current is not uniform. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an embedded graphene diode manufacturing method.