• 专利标题:   Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.
  • 专利号:   WO2022200351-A1, GB2606203-A, GB2607410-A
  • 发明人:   DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J
  • 专利权人:   PARAGRAF LTD
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/40, C01B032/186, G02F001/025, G02F001/035
  • 专利详细信息:   WO2022200351-A1 29 Sep 2022 C23C-016/40 202285 Pages: 45 English
  • 申请详细信息:   WO2022200351-A1 WOEP057497 22 Mar 2022
  • 优先权号:   GB004140, GB006149, GB007209, GB010027

▎ 摘  要

NOVELTY - Method of forming a graphene layer structure, involving providing a growth substrate having a growth surface, and forming a graphene layer structure on the growth surface by chemical vapor deposition, where the growth surface is formed of a material comprising yttria-stabilized zirconia, magnesium aluminate, yttrium aluminum perovskite, calcium fluoride and lanthanum trifluoride. USE - The method is useful of forming a graphene layer structure. ADVANTAGE - The method enables the production of high-quality graphene with excellent uniformity and a constant number of layers across its whole area on the substrate without additional carbon fragments or islands, the strict requirements in the art of electronic device manufacture means that there remains a need to further improve the electronic properties of the graphene and to provide methods that are more reliable and more efficient for the industrial manufacture of graphene, particularly large area graphene on non-metallic substrates. The method provides superior growth surfaces for the formation of high quality graphene and graphene substrates suitable for use in electronic device fabrication. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a graphene substrate; and an electrical device.