▎ 摘　　要

NOVELTY - The array has a graphene provided on a surface of a source-drain electrode array part i.e. metal electrode, for inducting growth of an organic semiconductor crystal, where thickness of the source-drain electrode array part is 40 nm. The organic semiconductor crystal is grown on a graphene film, where the organic semiconductor crystal is made of pentacene and rubrene. USE - Bottom gate bottom-contact structured organic single crystal transistor array. ADVANTAGE - The array has better operational effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an organic single crystal transistor array preparing method.