▎ 摘　　要

NOVELTY - Fabricating patterned graphene comprises: providing a substrate (10a); forming a catalytic layer (20a) on the substrate; forming a carbon layer (30a) on the catalytic layer; performing a photolithographic etching process on the carbon layer to form a patterned carbon layer; and heating the patterned carbon layer to a synthesis temperature to form a patterned graphene layer. USE - The method is useful for fabricating patterned graphene. ADVANTAGE - The method provides large-area patterned graphene structures using photolithographic etching process and apparatus, which are much more efficient than the laser etching process and apparatus for patterning the carbon layer of graphene layer, and thus the method is simple and has high productivity at low cost. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) fabricating a patterned graphene comprising providing a substrate, forming a catalytic layer on the substrate, performing a photolithographic etching process on the catalytic layer to form a patterned catalytic layer, forming a carbon layer including a patterned area covering the patterned catalytic layer and a non-patterned area covering the substrate on the patterned catalytic layer and heating the carbon layer to a synthesis temperature to convert the patterned area of the carbon layer into a patterned graphene layer; and (2) fabricating a patterned graphene comprising providing a substrate, forming a catalytic layer on the substrate, forming a carbon layer on the catalytic layer, heating the carbon layer to a synthesis temperature to obtain a graphene layer and performing a photolithographic etching process on the graphene layer to obtain a patterned graphene layer. DESCRIPTION OF DRAWING(S) - The figure shows a sectional view of a patterned graphene fabrication. Substrate (10a) Catalytic layer (20a) Carbon layer (30a) Photoresist layer (40a) Sacrifice area (41a)