▎ 摘　　要

NOVELTY - The method involves reacting a metal with a carbon-containing material by performing first anneal on the metal and a substrate (601) to form a metal-containing compound layer and a graphene layer on the metal-containing compound layer distal from the substrate. The graphene layer is transferred to a device substrate. A gate electrode (609) proximate the graphene layer is formed on the device substrate. First contact (901) and second contact are formed to the graphene layer on the device substrate, where the first contact and the second contact are on opposite sides of the gate electrode. USE - Method for manufacturing a carbon layer i.e. graphene, for integrated circuits to be formed from a variety of active and passive devices on a semiconductor substrate. Uses include but are not limited to transistor, resistor, capacitor and inductor. ADVANTAGE - The method enables obtaining a high-quality and efficient process for manufacturing the carbon layer. The method enables arranging the carbon layer in place such that the substrate and a silicide layer can be removed, thus avoiding the need for a transfer layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a formation of contacts to a carbon layer in a formation of a transistor. Carbon layer (205) Substrate (601) Gate electrode (609) Transistor (900) Contact (901)