▎ 摘　　要

NOVELTY - The composition of matter comprises group III-V nanowires or nanopyramids that are epitaxially grown on a polycrystalline or single-crystalline graphene layer. The graphene layer is directly supported on a crystalline substrate, such as a group III-V semiconductor, sapphire, silicon carbide or diamond substrate, in which the epitaxy, crystal orientation and facet orientations of the nanowires or nanopyramids are directed by the crystalline substrate. USE - Composition of matter for light-emitting diode or photodetector device (claimed). ADVANTAGE - The use of thin intermediate layer enables remote epitaxial effects to take place without having to use an entire substrate made of expensive semiconductor material. The direct epitaxial growth of the nanowires or nanopyramids on the substrate or intermediate layer is enabled, with the advantage that any additional nanostructures that have grown on top of the graphene directly, can also be epitaxial with the intermediate layer/crystalline substrate beneath the graphene through remote epitaxy. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a process including epitaxially growing group III-V nanowires or nanopyramids on a polycrystalline or single-crystalline graphene layer; and (2) a light-emitting diode or photodetector device. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic sectional view of the composition of matter with nanowires grown on a thin polycrystalline or single-crystalline graphene layer on a substrate.