• 专利标题:   Non-destructive transfer method of graphene film involves growing graphene thin film on metal substrate, annealing, forming support layer, removing substrate, adhering obtained product to target substrate, and peeling support layer.
  • 专利号:   CN110963484-A
  • 发明人:   LI D, CHEN Y, SUN X, JIA Y, JIANG K, SHI Z
  • 专利权人:   CHANGCHUN INST OPTICS FINE MECHANICS P
  • 国际专利分类:   C01B032/186, C01B032/194
  • 专利详细信息:   CN110963484-A 07 Apr 2020 C01B-032/186 202034 Pages: 11 Chinese
  • 申请详细信息:   CN110963484-A CN11335998 23 Dec 2019
  • 优先权号:   CN11335998

▎ 摘  要

NOVELTY - Non-destructive transfer method of large-area high-quality graphene film involves growing a large-area, high-quality single-layer graphene thin film on a catalytic metal substrate, forming a doped layer on the surface of the catalytic metal substrate/graphene, annealing, adhering thermal release tape or polydimethylsiloxane film to the surface of the catalytic metal substrate/graphene/doped layer, forming a support layer by reel extrusion, etching the catalytic metal substrate using an etching solution, removing the substrate, repeatedly washing resultant product with deionized water to remove ions and other impurity particles, obtaining graphene/doped layer/support layer, adhering the graphene/doped layer/support layer to a target substrate by reel extrusion, such that the graphene film is in contact with the target substrate, peeling the support layer, and obtaining a large-area high-quality single-layer graphene film containing a transferred doped layer. USE - Non-destructive transfer method of large-area high-quality graphene film. ADVANTAGE - The method transfers the large-area high-quality graphene film which has continuous surface morphology and two-dimensional structure, and improves work function and conductivity of graphene. DETAILED DESCRIPTION - Non-destructive transfer method of large-area high-quality graphene film involves growing a large-area, high-quality single-layer graphene thin film on a catalytic metal substrate in a low-pressure chemical vapor deposition (CVD) system using methane, hydrogen and argon as gas sources, forming a doped layer on the surface of the catalytic metal substrate/graphene by spin-coating or vacuum evaporation, annealing to improve the interaction force between the doped layer and the graphene film, adhering thermal release tape or polydimethylsiloxane film to the surface of the catalytic metal substrate/graphene/doped layer, forming a support layer by reel extrusion, etching the catalytic metal substrate using an etching solution, removing the substrate, repeatedly washing resultant product with deionized water to remove ions and other impurity particles, obtaining graphene/doped layer/support layer, adhering the graphene/doped layer/support layer to a target substrate by reel extrusion, such that the graphene film is in contact with the target substrate, peeling the support layer, and obtaining a large-area high-quality single-layer graphene film containing a transferred doped layer.