▎ 摘　　要

NOVELTY - The photoelectric detector has planar silicon (1) that is provided with an insulating layer (2) on the upper surface as a substrate. The upper insulating layer is removed by etching in the middle region of the substrate. The silicon in the detector window is etched into a silicon micrometer holes array. A copper oxide thin film (3) is deposited on the detector window. The copper oxide thin film and the silicon micro-pore array forms a silicon micro-pore-copper oxide vertical structure hetero-junction. A graphene (4) is transferred as a transparent top electrode on the substrate. A first metal thin-film electrode (5) is deposited on the graphene above the insulating layer. The coating or vacuum evaporation is brushed on the back of the planar silicon to form a second metal thin-film electrode (6). A self-driven broadband photo-detector based on a Si micro-pore/copper oxide vertical structure hetero-junction is constructed. USE - Self-driven broadband photoelectric detector based on silicon micro-pore-copper oxide vertical structure hetero-junction. ADVANTAGE - The self-driven broadband photoelectric detector uses high-purity copper target as a target material, and uses magnetron direct current reactive sputtering to realize thin film deposition and hetero-junction device preparation in one step. The detector has superior performance, and the preparation process of the detector is simple and easy. The self-driven broadband photoelectric detector has good compatibility with current silicon-based semiconductor technology. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing a self-driven broadband photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of self-driven broadband photoelectric detector based on silicon micro-pore-copper oxide vertical structure hetero-junction. Planar silicon (1) Insulating layer (2) Copper oxide thin film (3) Graphene (4) First metal thin-film electrode (5) Second metal thin-film electrode (6)