▎ 摘　　要

NOVELTY - Integrated assembly comprises conductive line, and conductive structure over the conductive line. The annular structure extending through the conductive structure (12), and the annular structure (42) comprises dielectric material (40). The active-material-structure (48) lining an interior periphery of the annular structure, and the active-material-structure comprises two-dimensional-material (44), the active-material-structure having an annular portion having an upper region, a lower region and an intermediate region between the upper region and the lower region, the active-material-structure having a base portion entirely closing a bottom of the lower region of the annular structure, an entirety of a bottom surface of the base being in direct physical contact with the conductive line. USE - Integrated assembly for use in semiconductor device of resistive memory. ADVANTAGE - The integrated assembly has improved transistor device configurations utilizing two-dimensional-material. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an integrated assembly. Conductive structure (12) Dielectric material (40) Annular structure (42) Two-dimensional-material (44) Active-material-structure (48)